Nanocomposite coatings consisting of preformed silver or chromium nanoparticles embedded into a hydrogenated amorphous carbon matrix (a-C:H) were synthesized by Electron Cyclotron Resonance plasma assisted Chemical Vapor Deposition (ECR-CVD). In a first step, the nanoparticles were distributed on silicon substrates by dipping in an ethanol suspensi...
The plasma enhanced chemical vapor deposition(PECVD) system was used for fabricating the silicon films with different hydrogen dilution ratio(RH) under the high power density, high pressure and low substrate temperature. High-resolution transmission electron microscopy(HRTEM) and Raman spectroscopy indicated that the thin films were nanocrystalline...
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
The effect of He/H-2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement technique. Furthermore, the main requirements for reliable NI measurements on plasma-modified low-k films are discussed. The results...
This paper investigates the influence of the electrode spacing, chamber pressure, total gas flow, and H-2 dilution on the crystallinity, resistivity, uniformity, and stress of polycrystalline silicon-germanium (poly-SiGe) films grown by plasma-enhanced chemical vapor deposition (PECVD). Boron-doped PECVD SiGe films of 1.6 mu m thick are deposited o...
We have studied the influence of chemical and physical sputtering on the surface morphology of hydrogenated carbon films deposited on silicon substrates by bias-enhanced electron cyclotron resonance chemical vapor deposition. Atomic force microscopy based power spectrum density (PSD) and roughness analysis have been used to investigate the film mor...
We have compared the current-voltage characteristics of silicon nitrides prepared from the two gas combinations N2/NH3/SiH4 (N2-SiNx) and He/NH3/SiH4 (He-SiNx) at temperatures between 100 and 350 degrees C. A downstream plasma enhanced chemical vapor deposition reactor with a non-ECR microwave plasma source has been used. While N2-SiNx with reasona...
