Publication search
with plasma chemical vapour deposition as keyword
Mermoux, Michel Marcus, Bernadette Abello, Louis Rosman, Noël Lucazeau, Guy
Raman spectroscopy was applied to monitor the growth of diamond in different plasma-assisted chemical vapour deposition reactors. A gated, multichannel detection system was used to discriminate against the high level of background radiation produced by the plasma and the hot substrate. As a result, Raman spectra could be taken during diamond growth...
Liu, Shi-Yong Zeng, Xiang-Bo Peng, Wen-Bo Yao, Wen-Jie Xie, Xiao-Bing Yang, Ping Wang, Chao Wang, Zhan-Guo Zeng, X.-B.([email protected])
The plasma enhanced chemical vapor deposition(PECVD) system was used for fabricating the silicon films with different hydrogen dilution ratio(RH) under the high power density, high pressure and low substrate temperature. High-resolution transmission electron microscopy(HRTEM) and Raman spectroscopy indicated that the thin films were nanocrystalline...
Hao, Hui-Ying Li, Wei-Min Zeng, Xiang-Bo Kong, Guang-Lin Liao, Xian-Bo Hao, H.-Y.
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...