Publication search
with plasma chemical vapour deposited coatings as keyword

Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions

We fabricated (Ga,Mn)As/AlO(x)/Co(40)Fe(40)B(20) magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101...

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure

Photorefractive effects in ZnO nanorod doped liquid crystal cell

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon st...

Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching

Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy

Investigation of flexible electrodes modified by TiN, Pt black and IrO (x)

TiN, platinum (Pt) black and iridium oxide are introduced to the stimulating sites to improve the performance of the flexible electrode. Low temperature process is used to fabricate the modifying films. TiN is coated on the gold sites by magnetron sputtering while platinum black and iridium oxide are coated by electroplating and electrodeposition, ...

Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetect...

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficie...