The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
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Behavioural investigation of InN nanodots by surface topographies and phase images
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We employ surface topographies and phase images to investigate InN nanodots. The samples are annealed at 450, 500 and 550 square. The results reveal that the statistical distributions of number density and mean size depend on annealing ambient. The behaviours of thermal annealing between InN films and InN nanodots are distinguishable: the alloying ...
Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions
We fabricated (Ga,Mn)As/AlO(x)/Co(40)Fe(40)B(20) magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101...
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
Photorefractive effects in ZnO nanorod doped liquid crystal cell
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon st...
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy
Investigation of flexible electrodes modified by TiN, Pt black and IrO (x)
TiN, platinum (Pt) black and iridium oxide are introduced to the stimulating sites to improve the performance of the flexible electrode. Low temperature process is used to fabricate the modifying films. TiN is coated on the gold sites by magnetron sputtering while platinum black and iridium oxide are coated by electroplating and electrodeposition, ...
