ren, gb wang, zg xu, b bing, z china, gb r ren
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear term...
liu, y xiao, xr zeng, yp yan, ch zheng, hq sun, dz acad, y r liu
The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing t...
jh, ke zhu, nh xie, la zhao, lj man, jw sun, k wang, lx chen, sf liu, jg zhang, y
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wang, sl chen, l meng, kk pf, xu meng, hj lu, j yan, ws zhao, jh
xiaohong), xh yang (yang xiulai), (xu xiuping), xp wang (wang haiqiao), ni (ni qin), q han (han zhichuan), zc niu (niu david a.), williams da (williams
We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier d...
shang, xj jf, he mf, li zhan, f hq, ni niu, zc pettersson, h fu, y
Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole...
Hao, Hui-Ying Li, Wei-Min Zeng, Xiang-Bo Kong, Guang-Lin Liao, Xian-Bo Hao, H.-Y.
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
Mohan Kumar, Ganesan Ilanchezhiyan, Pugazhendi Cho, Hak Dong Yuldashev, Shavkat Jeon, Hee Chang Kim, Deuk Young Kang, Tae Won
Published in
Nanomaterials
Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS2 can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS2 nanoflakes with Zn doping via simple hydrothermal route. The effect o...
m., andrea
Phthalocyanines have enjoyed throughout the years the benefits of being exquisite compounds with many favorable properties arising from the straightforward and diverse possibilities of their structural modulation. Last decades appreciated a steady growth in applications for phthalocyanines, particularly those dependent on their great photophysical ...