The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear term...
The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing t...
We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier d...
[[abstract]]本研究旨在利用非平衡磁控濺鍍法技術，製備二氧化鈦(TiO2)光觸膜薄膜，並根據TiO2半導體之光電效應與光催化活性，進行相關效能之探討，以瞭解光催化活性與光電效應之關係，並期望藉此建立一套快速篩選觸媒活性之機制。本研究所使用的觸媒，係先於氧化鋁基板上鍍上梳型銀電極，再利用濺鍍技術鍍上TiO2薄膜，相關製備之觸媒可同時進行光催化分解污染物與實氣體感測驗。本研究之主要實驗參數包括：觸媒類型、污染物(MtBE，Methanol、Acetone)、反應溫度(60~120oC)和反應溼度(0~3712 μM)等進行相關實驗測試，相關之實驗係於批分式光催化反應中進行。 研究結果顯示：MtBE，Methanol、Acetone有機物呈現典型之氣相光催化氧化反應特性，三種揮發性有機物...
Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole...
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
[[abstract]]結合光催化氧化程序去除污染物為近年來相當熱門的研究議題，許多研究也致力於提昇光觸媒的活性，以符合其特定用途的需求，但這些光觸媒活性改良成效的評定，仍有賴於繁複且冗長的化學活性測試，其時效性有待提昇。由於光觸媒本質上屬於金屬半導體氧化物，當吸附污染物時，會導致其導電率的改變，產生光電效應的現象。基於此，本研究旨在開發一快速篩檢TiO2光觸媒氧化的方法，期能在較短的檢測時間下，篩選出活性較佳的光觸媒。本研究以非平衡磁控濺鍍技術，製備含有梳型電路之光觸媒半導體薄膜，利用二氧化鈦的光電效應與二氧化鈦的光催化活性，分別以MtBE、Methanol、Acetone為污染物，配合以反應溫度等參數進行相關探討，以瞭解光催氧化活性與光電效應之關係，期望藉此建立一套快速篩選觸媒氧化活性之...
