The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear term...
The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing t...
We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier d...
Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole...
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
