We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
Mouis, M.Dollfus, P.Mougel, B.Pône, J.-F.Castagné, R.
La simulation de dispositifs TEGFETs a permis d'éclaircir l'influence du transfert spatial sur le mécanisme de saturation du courant de drain dans ce type de transistor. Dans le TEGFET à grille longue (1 μm), ce phénomène n'apparaît pas et le courant de drain est saturé par pincement du canal. Dans le TEGFET à grille courte (0,5 μm), à la fois le t...
Cet article décrit les mécanismes qui sont à l'origine du phénomène de Second Claquage dans le transistor M.O.S., à savoir l'apparition d'une caractéristique à résistance négative en régime d'avalanche. Dans le cas des transistors à canal N, on montre que le lieu critique de basculement est lié, à bas niveau de courant, à l'« effet substrat » du T....
A model is presented to explain the differential negative resistance observed in superconducting microbridges. This model postulates the formation in the bridge of a non-equilibrium state where the superconducting gap is lowered and the critical current decreases as the voltage increases thus giving rise to a differential negative resistance. The e...