We fabricated a single tunneling junction with a nanometer-scale gap between Pt electrodes. We found that the gap distance became smaller after a current sweep, which was presumably caused by the migration of the Pt atoms at the anode. The junction showed a reproducible negative differential resistance characteristic after reduction in the gap. The...
In order to analyze the thermal characteristic of GaAs-based laser diodes during degradation, aging tests were carried out under the conditions of the constant current stress for808 nm GaAs-based laser diodes. The temperature of active layer and the thermal resistance were investigated by using electrical method. It was found that the temperature o...
Vanadium oxide thin films were deposited by reactive direct current facing targets magnetron sputtering, and then annealed in oxygen ambience under different temperature to fabricate phase transition vanadium dioxide thin films with different grain size. The transformation of resistance and transmittance of vanadium oxide thin films were measured a...
The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants were studied. The varistor ceramics samples were characterized by XRD and SEM analysis, as well as by dc electrical measurements, such as the nonlinearity coefficients, leakage current and threshold voltage. T...
Using first-principles band structure methods, we have systematically studied the electronic structures, magnetic stabilities, and half-metal properties of 3d transition-metal (TM) doped Rocksalt MgO compounds TMMg3O4 (TM = V, Cr, Mn, Fe, Co, and Ni). The calculations reveal that only CrMg3O4 has a ferromagnetic stability among the six compounds, w...
10.1109/TCSI.2009.2037399 / IEEE Transactions on Circuits and Systems I: Regular Papers / 57 / 8 / 1817-1828
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
We consider THz emission due to fluxon dynamics in a stack of inductively coupled long Josephson junctions connected electrically to a resonant cavity. By comparing to experiments on Josephson junction parametric amplifiers we consider the role of a negative resistance in connection with THz emission experiments. We suggest that indeed the negative...
