Besedina, A. N. Kabychenko, N. V. Pavlov, D. V. Volosov, S. G.
Published in
Seismic Instruments
AbstractTo solve various engineering problems, it is often necessary to record signals in the 0.1–2000 Hz range. The lower limit of this range is beyond the operating band of geophones. This article considers extending of geophone frequency responses in two ways: multiplication of the transfer functions and introduction of negative resistance. The ...
Hussain, Muhammad Waqar Elahipanah, Hossein Zumbro, John E. Rodriguez, Saul Malm, B. Gunnar Mantooth, H. Alan Rusu, Ana
This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦...
Qian, Chunqi Duan, Qi Dodd, Steve Koretsky, Alan Murphy-Boesch, Joe
Published in
Magnetic resonance in medicine
An integrated current amplifier based on a HEMT can enhance the sensitivity of inductively coupled local detectors when weakly coupled. This amplifier enables efficient signal transmission between customized user coils and commercial clinical coils, without the need for a specialized signal interface. Magn Reson Med 75:2573-2578, 2016. Published 20...
Qian, Chunqi Duan, Qi Dodd, Steve Koretsky, Alan Murphy-Boesch, Joe
Published in
Magnetic resonance in medicine
An integrated current amplifier based on a HEMT can enhance the sensitivity of inductively coupled local detectors when weakly coupled. This amplifier enables efficient signal transmission between customized user coils and commercial clinical coils, without the need for a specialized signal interface. Magn Reson Med 75:2573-2578, 2016. Published 20...
Nishiguchi, K. (author) Castellanos-Gomez, A. (author) Yamaguchi, H. (author) Fujiwara, A. (author) Van der Zant, H.S.J. (author) Steele, G.A. (author)
We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current characteristi...
Gadzhieva, G. S. Akhmedov, I. A. Abdul-zade, N. N.
Published in
Journal of Engineering Physics and Thermophysics
MSM structures W–Ag4SSe–W have been produced and their volt–ampere characteristics in the temperature range 290–350 K and at a temperature of 77 K were investigated. It is shown that the volt–ampere characteristic of such an MSM structure is substantially nonlinear and takes an N-like shape at different polarities of the voltage applied to the stru...
Gotsulenko, V. V. Gotsulenko, V. N.
Published in
Journal of Engineering Physics and Thermophysics
The character of change in the amplitude of self-oscillations of the flame in a combustion chamber, which are excited as a result of the phenomenological delay of combustion of the fuel in it, with variation of the chambers’s wave resistance and outflow of the combustion products at a constant pressure through a throttling orifice and a converging ...
Chen, Y. Mouthaan, K.
10.1002/mop.26020 / Microwave and Optical Technology Letters / 53 / 6 / 1356-1360 / MOTLE
Mizukami, Takahiro Miyato, Yuji Kobayashi, Kei Matsushige, Kazumi Yamada, Hirofumi
We fabricated a single tunneling junction with a nanometer-scale gap between Pt electrodes. We found that the gap distance became smaller after a current sweep, which was presumably caused by the migration of the Pt atoms at the anode. The junction showed a reproducible negative differential resistance characteristic after reduction in the gap. The...
Qiao, Yanbin Feng, Shiwei Ma, Xiaoyu Wang, Xiaowei Guo, Chunsheng Deng, Haitao Zhang, Guangchen Qiao, Y.([email protected])
In order to analyze the thermal characteristic of GaAs-based laser diodes during degradation, aging tests were carried out under the conditions of the constant current stress for808 nm GaAs-based laser diodes. The temperature of active layer and the thermal resistance were investigated by using electrical method. It was found that the temperature o...