A novel method for the synthesis of unsolvated trimethylindium using indium trichloride and methyllithium as starting materials is described, which is capable of producing high-purity material for MOVPE. The method is distinguished by its simplicity and safety. The crucial point of this synthetic way is the reaction of indium trichloride with four ...
An effective-mass formulation for superlattices grown on (11N)-oriented substrates is given. It is found that, for GaAs/AlxGa1-xAs superlattices, the hole subband structure and related properties are sensitive to the orientation because of the large anisotropy of the valence band. The energy-level positions for the heavy hole and the optical transi...
The critical issues for the optimization of the MBE grown layer sequence for the integration of an optical waveguide, a PIN photodiode and a junction field effect transistor (JFET) to form a monolithical integrated receiver chip are discussed. For the JFET layer sequence low residual carrier density of the thick buffer layer has been successfully a...
GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superl...
A two-wavelengths transmission method is presented for measuring the thickness of epitaxial layers with a resolution of better than 10 nm. The measuring speed is high which for the first time makes possible an imagelike presentation of thickness inhomogeneities in layers. A calibration scheme is described which allows quantitative thickness measure...
GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface.
A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calcula...
Although metalorganic vapor phase epitaxy (MOVPE) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. In this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositio...
With conventional photolithography and wet chemical etching, we have realized GaAs/AlGaAs buried ridge-quantum-well-wires (RQWWs) with vertically stacked wires in lateral arrays promising for device application, which were grown in situ by a single-step molecular beam epitaxy growth and formed at the ridge tops of mesas on nonplanar substrates. Con...
