EXCITON LOCALIZATION IN CORRUGATED GAAS/ALAS SUPERLATTICES GROWN ON (311) GAAS SUBSTRATES
PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER
Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional...
METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN
Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.
BAND-STRUCTURE OF MG1-XZNXSYSE1-Y
The empirical pseudopotential method within the virtual crystal approximation is used to calculate the band structure of Mg1-xZnySySe1-y, which has recently been proved to be a potential semiconductor material for optoelectronic device applications in the blue spectral region. It is shown that MgZnSSe can be a direct or an indirect semiconductor de...
HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE
Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal pe...
Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE
For the first time we present the integration of a tunable buried four-section DBR-laser butt coupled to a directional coupler based on semi-insulating strip loaded (InGaAsP/InP):Fe waveguides by using selective area epitaxy with large mask areas. Good planarity after the epitaxial regrowth of the waveguide layers has been achieved applying a speci...
THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION
A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calcula...
GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY
Although metalorganic vapor phase epitaxy (MOVPE) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. In this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositio...
GROWTH OF QUANTUM WIRE ARRAYS BY MBE ON NONPLANAR SUBSTRATES
OPTICAL CHARACTERISTICS OF GAAS/ALGAAS RIDGE-QUANTUM-WELL-WIRES GROWN BY MBE ON NONPLANAR SUBSTRATES
With conventional photolithography and wet chemical etching, we have realized GaAs/AlGaAs buried ridge-quantum-well-wires (RQWWs) with vertically stacked wires in lateral arrays promising for device application, which were grown in situ by a single-step molecular beam epitaxy growth and formed at the ridge tops of mesas on nonplanar substrates. Con...
