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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum...

Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates

Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...

Surface characterization of AlGaN grown on Si (111) substrates

Up to 500 nm thick crack-free Al(0.25)Ga(0.75)N and Al(0.32)Ga(0.68)N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal qu...

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular...

Molecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to0.17 or0.3) on offcut(100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence(PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary t...

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

Hole mediated magnetism in Mn-doped GaN nanowires

Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots

Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at77 K. The optimal growth temperature of quantum wells is440°C. The PL peak wavelength of quantum wells at300 K is1.98μm, and the FWHM is115 ...

2-5m InAs/GaSb superlattices infrared photodetector

High quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy(MBE). The detection wavelengths of these InAs/GaSb SLs infrared detectors were2-5μm. The material and optical qualities of InAs/GaSb superlattices on different substrate...