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Wu, Hailei Sun, Guosheng Yang, Ting Yan, Guoguo Wang, Lei Zhao, Wanshun Liu, Xingfang Zeng, Yiping Wen, Jialiang Wu, H.([email protected])
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A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor. The Al depth profile was almost box shaped with a height of1×1019cm-3 and a depth of550 nm. Three different annealing processes were developed to protect the wafer surface. Variations in RMS roughness ...
Hao, Hui-Ying Li, Wei-Min Zeng, Xiang-Bo Kong, Guang-Lin Liao, Xian-Bo Hao, H.-Y.
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
