Li, CL Yang, FH Feng, SL Wang, XM
We investigated the transmission probability of a single electron transmission through a quantum ring device based on the single-band effective mass approximation method and transfer matrix theory. The time-dependent Schrodinger equation is applied on a Gaussian wave packet passing through the quantum ring system. The electron tunneling resonance p...
Wisniak, Jaime
In this second part on the history of the development of the first law of thermodynamics, we describe the contributions of the four principal scientists, Colding, Mayer, Joule, and Helmholtz, which provided the statement of the principle of conservation of energy, as we know it today. In the first part of this paper (Wisniak, 2008) we discussed the...
Wisniak, Jaime
The concepts of matter, motion, and energy have occupied the minds of philosophers and scientists since ancient times. Although there were many who believed that mass and energy are conserved, it took many years until the first law of thermodynamics acquired its present form. The law of conservation of energy is one of the fundamental principles of...
Shi, LJ Fang, ZJ Li, JB
Using first-principles methods we have calculated electronic structures, optical properties, and hole conductivities of CuXO2 (X=Y, Sc, and Al). We show that the direct optical band gaps of CuYO2 and CuScO2 are approximately equal to their fundamental band gaps and the conduction bands of them are localized. The direct optical band gaps of CuXO2 (X...
x. w.), xw zhang (zhang y. h.), yh zhu (zhu j. b.), jb xia (xia
The Hamiltonian of the zinc-blende quantum rods in the framework of eight-band effective-mass approximation in the presence of external homogeneous magnetic field is given. The electronic structure, optical properties and electron g factors of GaAs quantum rods are investigated. We found that the electron g factors are very sensitively dependent on...
yang, xd zy, xu sun, z sun, bq ding, l wang, fz zz, ye
The recombination property of nitrogen (N)-related acceptor-bound states in ZnO has been investigated by photoluminescence (PL), time-resolved PL, and selective PL. Several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large Coulomb interaction. It is strongly suggested that bound exc...
weitao), wt cao (cao weimin), du (du fuhai), (su guohua), (li
Low temperature (10 K) strong anti-Stokes photoluminescence (ASPL) of ZnO microcrystal excited by low power cw 532 nm laser is reported here. Energy upconversion of 1.1 eV is obtained in our experiment with no conventional nonlinear effect. Through the study of the normal photoluminescence and temperature dependence of ASPL we conclude that the gre...
hong-quan), hq zhao (zhao li-juan), (yu yong-zhen), yz huang (huang
An n-InP-based InGaAsP multiple-quantum-well wafer was bonded with p-Si by chemical surface activated bonding at 70 degrees C, and then annealed at 450 degrees C. Different thermal expansion coefficients between InP and Si will induce thermal stresses in the bonded wafer. Planar and cross-sectional distributions of thermal stress in the bonded InP-...
sun, j jin, p zhao, c lk, yu xl, ye xu, b chen, yh wang, zg
Molecular beam epitaxy was employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temp...
hong-quan), hq zhao (zhao li-juan), (yu yong-zhen), yz huang (huang yu-tian), yt wang (wang
Wafer bonding between p-Si and an n-InP-based InGaAsP multiple quantum well (MQW) wafer was achieved by a direct wafer bonding method. In order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees C, pair two at 250 degrees C, pair three at 350 degrees C, and pa...