Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
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Photoluminescence of CdSe nanowires grown with and without metal catalyst
Structures and optical characteristics of InGaN quantum dots grown by MBE
InGaN quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy(RF-MBE). The effects of InN nuclear layer on the structural and optical characteristics of InGaN quantum dots were studied. In-situ reflection high energy electron diffraction(RHEED) was used to analyze the growth of the InGaN dots structure...
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chem...
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Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic ch...
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In this paper a systematic investigation of structural and optical anisotropy of m-plane InN film grown on gamma-LiAlO(2)(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. The InN film showed pure m-plane phase as confirmed by x-ray diffraction omega/...
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
Effect of gas pressure on the properties of silicon thin film
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
