Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at77 K. The optimal growth temperature of quantum wells is440°C. The PL peak wavelength of quantum wells at300 K is1.98μm, and the FWHM is115 ...
2-5m InAs/GaSb superlattices infrared photodetector
High quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy(MBE). The detection wavelengths of these InAs/GaSb SLs infrared detectors were2-5μm. The material and optical qualities of InAs/GaSb superlattices on different substrate...
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
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Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1 1 1) substrate. Samples were grown by metal organic chemical vapor deposition. Optical microscopy, atomic force microscopy and X-ray diffraction were employed to characterize the samples. The results demonstrated that thickness of high temperature...
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique
High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope, X-ray diffraction, and Raman spectroscopy. The results show that the LT Ge buffer is rough due to the three-dimensional islan...
First principles study of the electronic properties of twinned SiC nanowires
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100)subs trate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100)substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a chi(min) value of 6.7% measured by channeling and random Ruther...
