First principles study of the electronic properties of twinned SiC nanowires
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100)subs trate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100)substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a chi(min) value of 6.7% measured by channeling and random Ruther...
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectrosco...
GaN grown with InGaN as a weakly bonded layer
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UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition(UHVCVD) technique. The quantum-confined Stark effect(QCSE) is clearly observed in our MQWs structure.?2011 IEEE.
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates
Epitaxial Ge(1-x)Sn(x) alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100)subs trate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100)substrate, a high crystalline quality strained Ge(0.97)Sn(0.03) alloy is grown, with a chi(min) value of 6.7% measured by channeling and rando...
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells
The plasma enhanced chemical vapor deposition(PECVD) system was used for fabricating the silicon films with different hydrogen dilution ratio(RH) under the high power density, high pressure and low substrate temperature. High-resolution transmission electron microscopy(HRTEM) and Raman spectroscopy indicated that the thin films were nanocrystalline...
Growth Simulations of Self-Assembled Nanowires on Stepped Substrates
The growth of self-assembled nanowires on stepped substrates is modeled by means of kinetic Monte Carlo simulations. It is found that the energy barrier at the step edges has a great effect on the formation of nanoislands on stepped substrates. As the barrier is smaller than 0.1 eV, nanowires with high aspect ratios can be obtained. The width, aspe...
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
