Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photolu...
Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photolu...
Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were ...
Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were ...
The evolution of carbonization process on Si as a function of ion dose has been carried out by mass-selected ion-beam deposition technique. 3C-SiC layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and X-ray photoelectron spectroscopy (XPS). The chemical states of Si and carbon have also ...
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm to785nm.?2011 IEEE.
Microwave photonic filter requires high-speed Radio frequency(RF)-optical and optical-RF signal conversion. Light sources and photo-detectors(PDs) are indispensible for such conversions. Monolithic integration of functions of photon emission and detection is demonstrated using epitaxial Ge on Si. The fabricated waveguided PD shows a high bandwidth ...
H5 photonic crystal(PC) microcavities co-implanted with erbium(Er) and oxygen(O) ions were fabricated on silicon-on-insulator(SOI) wafers. Photoluminescence(PL) measurements were taken at room temperature and a light extraction enhancement of up to12 was obtained at1.54μm, as compared to an identically implanted unpatterned SOI wafer. In addition, ...
High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope, X-ray diffraction, and Raman spectroscopy. The results show that the LT Ge buffer is rough due to the three-dimensional islan...
Epitaxy of Ge on offcut Si(001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.?2011 IEEE.
