Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm to785nm.?2011 IEEE.
Microwave photonic filter requires high-speed Radio frequency(RF)-optical and optical-RF signal conversion. Light sources and photo-detectors(PDs) are indispensible for such conversions. Monolithic integration of functions of photon emission and detection is demonstrated using epitaxial Ge on Si. The fabricated waveguided PD shows a high bandwidth ...
H5 photonic crystal(PC) microcavities co-implanted with erbium(Er) and oxygen(O) ions were fabricated on silicon-on-insulator(SOI) wafers. Photoluminescence(PL) measurements were taken at room temperature and a light extraction enhancement of up to12 was obtained at1.54μm, as compared to an identically implanted unpatterned SOI wafer. In addition, ...
High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope, X-ray diffraction, and Raman spectroscopy. The results show that the LT Ge buffer is rough due to the three-dimensional islan...
Epitaxy of Ge on offcut Si(001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.?2011 IEEE.
The plasma enhanced chemical vapor deposition(PECVD) system was used for fabricating the silicon films with different hydrogen dilution ratio(RH) under the high power density, high pressure and low substrate temperature. High-resolution transmission electron microscopy(HRTEM) and Raman spectroscopy indicated that the thin films were nanocrystalline...
A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor. The Al depth profile was almost box shaped with a height of1×1019cm-3 and a depth of550 nm. Three different annealing processes were developed to protect the wafer surface. Variations in RMS roughness ...
The surface plasmon polariton(SPP) is a novel approach for light trapping in solar cells. SPP enhanced nanocrystalline silicon thin film solar cells were studied in this work. Based on Mie's theory, the optical properties of Ag, Al, Cu, and Au nanoparticles were investigated approximately. The results show that the normalized scattering efficiency,...
4H-SiC-based metal-insulator-semiconductor(MIS) ultraviolet(UV) photodetectors with thermally grown SiO2 and evaporated Al2}O3SiO}2(A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of3.25\times10}-10 and9.75\times10-9}\ A/cm}2 and high UV-to-visible rejection ratios of2}\t...
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve ...
