Effect of photoexcitation on the surface band bending in delta-doped GaAs:Si/Al0.33Ga0.67As double heterostructures.
Photoluminescence spectroscopy in combination with electric-field-induced Raman scattering have been used to study the effect of photoexcitation on the surface electric field due to surface trap states in Delta-doped GaAs:Si/Alsub0.33Gasub0.67As double heterostructures. Upon variation of the optical power density over four orders of magnitude a con...
