This paper explores the methodologies of real-time measurement of photoresist film thickness on silicon wafers using multi-wavelength reflection interferometry. Reflected light from the wafer's surface, containing the interference profile, is collected in-situ via a fiber optic cable and film thickness is determined in real-time via a pattern recog...
An in-line photoresist thickness measuring device wherein a plurality of projection optical fibers are disposed over a wafer processing track for illuminating portions of a wafer as the wafer proceeds along the track. The light scattered back from each illuminated portion is detected by a corresponding plurality of pickup optical fibers and communi...
This paper will discuss the performance of equipment which monitors and so controls photoresist thickness and uniformity during plasma ashing without interfering with the process. Practical monitoring of a subtractive process of this type is significantly more complex than monitoring deposition processes. An initial absolute thickness measurement i...
An optical switch for transmitting light between a first location and a selected one of a plurality of second locations. The switch includes a mirror having a concave, reflective surface and an axis. The switch also includes a plurality of fiber optic cables, one of which is disposed at the first location and the remainder of which are disposed at ...
Includes bibliographical references (leaves 214-219).
The study of small surface fatigue cracks in AISI 4140 quenched and tempered steel by a nondestructive surface acoustic wave technique is summarized. A novel cantilevered bending, plate-type fatigue specimen is described that is compatible with the acoustic method. Small cracks are initiated from a 25-μm deep surface pit produced by an electrospark...
Optical emission spectroscopy (OES) has proven to be a valuable tool in the developmrent and production of state-of-the-art semiconductor devices. Application to the plasma etching of a variety of materials necessary for integrated circuit fabrication is discussed, with particular emphasis placed on etch endpoint analysis. The utility of OES techni...
Chromium ions, viz., chromic (Cr+3 = III) and chromate (Cr+6 = VI), can be reliably, conveniently, reproducibly, and quickly separated and detected by the use of conventional paired-ion, reversed phase (RP) high performance liquid chromatography (HPLC) together with refractive index (RI) and/or inductively coupled plasma emission spectroscopic (ICP...
Conventional high performance liquid chromatography instrumentation and packing materials can be inexpensively and rapidly utilized for the qualitative and quantitative analysis of various metal cations or anions. The final approaches utilize reversed phase HPLC in the form of paired-ion separations. The detection of individually eluted, fully reso...
A new 9-mm (i.d.) inductively-coupled plasma (ICP) torch is described which supports a stable, analytically useful plasma at less than 500 W of r.f. power and 7 l min-1 total argon gas flow. Detection limits, working curves and other analytical characteristics of the new device are compared with those of both a miniature (13-mm i.d.) and convention...
