The morphologies and defect structures of TiCr2 in several Ti-Cr alloys have been examined by optical metallography, x-ray diffraction, and transmission electron microscopy (TEM), in order to explore the room-temperature deformability of the Laves phase TiCr2. The morphology of the Laves phase was found to be dependent upon alloy composition and an...
The steady-state creep deformation behavior of a cast two phase gamma TiAl alloy having the composition Ti---48Al---1Nb (at.%) has been studied. Tension creep tests using the stress increment technique (θθ2θ3) were conducted over the temperature range of 704–850°C at constant initial applied stress level of 103.4–241.3 MPa. The activation energy fo...
No Abstract.
Includes bibliographical references (leaves 179-188).
This paper discusses and shows applications of optical emission spectroscopy techniques and methods to monitor plasma emissions during semiconductor processing. A brief discussion of the instrumentation that was used and the software to control the instrumentation is presented. Optical emission spectroscopy techniques discussed include chemical spe...
Includes bibliographical references (leaves 176-185).
A method and apparatus to control the plasma environment in a semiconductor or thin-film fabrication chamber. The apparatus and method include a means for measuring an optical emission spectrum of the chemical species in the plasma and a library containing a multiplicity of predefined spectral patterns. A processor automatically correlates the spec...
Includes bibliographical references.
Includes bibliographical references.
Includes bibliographical references (leaves 307-314).
