Published in JOM
Sheet-metal forming is a multi-billion-dollar industry in the United States, with an overwhelming portion of its use in automotive markets as formed-sheet components. With roughly one-third of the weight of an auto in this form, the Big Three automakers (Ford, General Motors, and Daimler-Chrysler) are looking for lighter, yet high-strength alternat...
Published in Physics of the Solid State
Resonance Raman scattering (RS) spectra of a ZnCdSe/ZnSe sample containing a single quantum well and quantum well-based open nanowires were studied at T=300 K. The longitudinal optical (LO) phonons involved in the formation of the observed spectra of the quantum-well and nanowire regions differ noticeably in energy. The LO phonon energies in the st...
Published in Biomechanics and Modeling in Mechanobiology
The knee meniscus exhibits significant spatial variations in biochemical composition and cell morphology that reflect distinct phenotypes of cells located in the radial inner and outer regions. Associated with these cell phenotypes is a spatially heterogeneous microstructure and mechanical environment with the innermost regions experiencing higher ...
Published in Journal of Materials Science
The strain analysis of a GaN epilayer with different growth times on a c-plane sapphire substrate via a two-step growth method, using low-pressure, metalorganic chemical vapor deposition, was conducted based on the precise measurement of the lattice parameters, using high-resolution X-ray diffraction. The high-temperature growth time was changed at...
Published in Journal of Materials Science
Published in Journal of Materials Science: Materials in Electronics
The strain state of a-plane GaN layers grown on r-plane sapphire was studied by Raman spectroscopy. Some of the layers investigated have been uncoalesced stripe structures grown by epitaxial lateral overgrowth (ELOG). Apart from frequency shifts, anisotropic strain within the a-plane leads to a slight splitting of the twofold degenerate E1 and E2 p...
This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray dif...
The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimat...
Published in Applied Physics A
In this article, metalorganic chemical vapor deposition (MOCVD)-grown InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with Al0.03Ga0.97N and Al0.03Ga0.97N/In0.01Ga0.99N superlattices-barrier layers on c-plane sapphire were studied for the influence of the strain-compensated barrier on the optical properties of the LEDs. High-resoluti...
Published in Applied Physics A
We investigate the mechanical properties of proposed graphene-like hexagonal gallium nitride monolayer (g-GaN) using first-principles calculations based on density-functional theory. Compared to the graphene-like hexagonal boron nitride monolayer (g-BN), g-GaN is softer, with 40 % in-plane stiffness, 50 %, 46 %, and 42 % ultimate strengths in armch...
