Published in Journal of Materials Science
We focus on the electronic structures of small gas molecule (such as CO, H2O, NH3, NO, and NO2)-adsorbed stanene monolayers by first-principles method. The results show that H2O, NH3, and CO molecules are physisorbed on stanene monolayer, while NO and NO2 molecules are found to be chemisorbed on stanene with quite large charge transfer, sizable ads...
Our first-principles full-potential density functional theory calculations show that a ZnS monolayer (ML-ZnS), which is predicted to adopt a graphene-like planar honeycomb structure with a direct band gap, undergoes strain-induced modifications in its structure and band gap when subjected to in-plane homogeneous biaxial strain (delta). ML-ZnS gets ...
Published in Journal of Materials Science
Ultrathin MoS2 sheets and nanostructures are promising materials for electronic and optoelectronic devices as well as chemical catalysts. To expand their potential in applications, a fundamental understanding is needed of the electronic structure and carrier mobility as a function of strain. In this paper, the effect of strain on electronic propert...
Published in Applied Physics A
We investigate the mechanical properties of proposed graphene-like hexagonal gallium nitride monolayer (g-GaN) using first-principles calculations based on density-functional theory. Compared to the graphene-like hexagonal boron nitride monolayer (g-BN), g-GaN is softer, with 40 % in-plane stiffness, 50 %, 46 %, and 42 % ultimate strengths in armch...
Published in Applied Physics A
In this article, metalorganic chemical vapor deposition (MOCVD)-grown InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with Al0.03Ga0.97N and Al0.03Ga0.97N/In0.01Ga0.99N superlattices-barrier layers on c-plane sapphire were studied for the influence of the strain-compensated barrier on the optical properties of the LEDs. High-resoluti...
This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray dif...
The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimat...
Published in Journal of Materials Science: Materials in Electronics
The strain state of a-plane GaN layers grown on r-plane sapphire was studied by Raman spectroscopy. Some of the layers investigated have been uncoalesced stripe structures grown by epitaxial lateral overgrowth (ELOG). Apart from frequency shifts, anisotropic strain within the a-plane leads to a slight splitting of the twofold degenerate E1 and E2 p...
Published in Journal of Materials Science
Published in Journal of Materials Science
The strain analysis of a GaN epilayer with different growth times on a c-plane sapphire substrate via a two-step growth method, using low-pressure, metalorganic chemical vapor deposition, was conducted based on the precise measurement of the lattice parameters, using high-resolution X-ray diffraction. The high-temperature growth time was changed at...
