Petti, L Faber, H Muenzenrieder, N Cantarella, G Patsalas, PA Troester, G Anthopoulos, TD
Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Inte...
Li, WJ Shi, DW Greene, Peter K Javed, K Liu, Kai Han, XF
Exchange biased nanostructures of IrMn/CoFe were deposited on anodized alumina with hexagonally patterned nanodot surface structures. Nanodots with diameters of 20, 70, and 100 nm were fabricated to investigate the size effect on the magnetic properties. Magnetometry and the first-order reversal curve method revealed significant enhancements of the...
Kirby, BJ Greene, PK Maranville, BB Davies, JE Liu, Kai
We have used polarized neutron reflectometry to show that controlled variation of growth pressure during deposition of Co/Pd multilayers can be used to achieve a significant vertical gradient in the effective anisotropy. This gradient is strongly dependent on deposition order (low to high pressure or vice versa), and is accompanied by a correspondi...
Rasool, K Rafiq, MA Ahmad, M Imran, Z Batool, SS Nazir, A Durrani, ZAK Hasan, MM
We investigate carrier transport properties of silicon nanowire (SiNW) arrays decorated with TiO2 nanoparticles (NPs). Ohmic conduction was dominant at lower voltages and space charge limited current with and without traps was observed at higher voltages. Mott’s 3D variable range hoping mechanism was found to be dominant at lower temperatures. The ...
Bell, BDC Murphy, ST Burr, PA Grimes, RW Wenman, MR
Atomic scale computer simulations using density functional theory were used to investigate the behaviour of tin in the tetragonal phase oxide layer on Zr-based alloys. The Sn×ZrSnZr× defect was shown to be dominant across most oxygen partial pressures, with Sn′′ZrSnZr″ charge compensated by V∙∙OVO•• occurring at partial pressures below 10−31 atm. I...
Roqan, IS Venkatesh, S Zhang, Z Hussain, S Bantounas, I Franklin, JB Flemban, TH Zou, B Lee, J-S Schwingenschlogl, U
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We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline Gdx Zn 1−xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) a...
van Horn, M Smith, P Mason, BP Hemmer, JR de Alaniz, J Read Hooper, JP Osswald, S
The development of mechanochromic molecules has opened new pathways for the study of localized stress and failure in polymers. Their application as stress or temperature diagnostics, however, requires suitable measurement techniques capable of detecting the force- and temperature-sensitive chemical species with high spatial resolution. Confocal ima...
Zhou, Yuchun Liu, Yu-Hsin Rahman, Samia N Hall, David Sham, LJ Lo, Yu-Hwa
We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. More...
Campi, Davide Donadio, Davide Sosso, Gabriele C Behler, Jörg Bernasconi, Marco
Phonon dispersion relations and electron-phonon coupling of hole-doped trigonal GeTe have been computed by density functional perturbation theory. This compound is a prototypical phase change material of interest for applications in phase change non-volatile memories. The calculations allowed us to estimate the electron-phonon contribution to the t...
Hoelzle, David J Chan, Clara K Scott, Michael B Lake, Melinda A Rowat, Amy C
Here, we demonstrate an in situ electrostatic actuator that can operate underwater across a wide range of displacements and frequencies, achieving a displacement of approximately 10-μm at 500-Hz and 1-μm at 5-kHz; this performance surpasses that of existing underwater physical actuators. To attain these large displacements at such high speeds, we o...