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Valley beam splitter based on strained graphene

We investigate theoretically the lateral displacements of valley-unpolarized electron beams in graphene after traversing a strained region. Valley double refraction occurs at the interface between the incident (unstrained) region and the strained region, in analogy with optical double refraction. It is shown that the exiting positions of K and K 0 ...

Compact Silicon-on-Insulator Dual-Microring Resonator Optimized for Sensing

半导体光电材料和热电材料的研究

Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition

Single-photon interference based on a single InAs quantum dot

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment

Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular...

Molecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to0.17 or0.3) on offcut(100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence(PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary t...

半导体量子点、环中的少电子体系：自旋轨道相互作用

The persistent charge and spin currents in topological insulator Bi(2)Se(3) nanowires