Material alternative to ITO for transparent conductive electrode in flexible display and photovoltaic devices
Published in Microelectronic Engineering
Material alternative to ITO for transparent conductive electrode in flexible display and photovoltaic devices
Published in Microelectronic Engineering
Material alternative to ITO for transparent conductive electrode in flexible display and photovoltaic devices
Published in Microelectronic Engineering
In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing p...
Published in Microelectronic Engineering
The purpose of this paper is to show the possibility for optimizing the post growth annealing process of CeO2 thin films sputtered on (111) Si by using in situ Raman characterization. In fact, the post growth annealing is an important step in the microelectronic process and consequently the studies, which permit to find the good annealing condition...
Characterization and photovoltaic performance of organic device based on CoMTPP/p-Si heterojunction
Published in Microelectronic Engineering
Multi-step etching of three-dimensional sub-millimeter curved silicon microstructures with in-plane principal axis
Published in Microelectronic Engineering
Fabrication and electrical characterization of CdO/p-Si photosensors
Published in Microelectronic Engineering
CdO nanorods were grown by sol–gel technique and the structural properties were analyzed by X-ray diffraction and AFM measurements. CdO films were grown onto p-type silicon substrates. Optical band gap was determined by optical absorption. The optical band gap of the CdO film was changed by Al dopant. Heterojunction diodes based on undoped and alum...
Low-k a-SiCO:H films as diffusion barriers for advanced interconnects
Published in Microelectronic Engineering
Scaling of the copper interconnect structures requires dielectric barrier materials with a gradually lower dielectric constant that still have adequate copper and moisture barrier properties. In this work, we study the PE-CVD deposition of a-SiCO:H films using octamethyl cyclotetrasiloxane (OMCTS) as a precursor, targeting a dielectric constant of ...
Electrical characterizations of solution-processed dielectric layer of octamethylcyclotetrasiloxane
Published in Microelectronic Engineering
Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100°C, 300°C, and 500°C were examined and their dielectric properties were characterized on structures of metal–insulator–silicon (MIS) capacitor and thin film transistor (TFT) with solut...
Microfabrication of Surface Acoustic Wave Device Using UV LED Photolithography Technique
Published in Microelectronic Engineering
Microfabrication of typical surface acoustic wave (SAW) devices using low cost ultra-violet light emitting diodes (UV LED) lithography technique is demonstrated. UV lithography is one of the prime fabrication steps while manufacturing SAW devices. Recently, UV LED based lithography has created attention for their low cost setup, low power consumpti...
