ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
- Authors
-
- jie), j zhao (zhao
- lizhong), (hu
- zhaoyang), zy wang (wang
- jie), j sun (sun
- zhijun), zj wang (wang
- Publication Date
- Jan 01, 2006
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Zno
- Pulsed Laser Deposition
- Oxygen Pressure
- Annealing
- X-Ray Diffraction
- Photoluminescence
- Ultraviolet Emission
- Room-Temperature
- Zinc-Oxide
- 半导体材料
- Pulsed Laser Deposition
- Rapid Thermal Processing
- Heat Treatment
- X-Ray Crystallography
- Photoluminescence
- Ultraviolet Emission
- Room Temperature
- Zinc Oxide
- Deposition, Pulsed Laser
- Laser Deposition, Pulsed
- Laser Ablation Deposition
- Rapid Thermal Annealing
- Rapid Thermal Process
- Annealing
- Incoherent Light Annealing
- Arc Lamp Annealing
- Flash Lamp Annealing
- Halogen Lamp Annealing
- Rta
- Rapid Thermal Nitridation
- Rapid Thermal Oxidation
- Rtp
- Recrystallisation Annealing
- Recrystallization Annealing
- Solution Annealing
- Solution Annealing Mechanisms
- Loesungsgluehung
- Mecanismes De Mise En Solution (Recuit)
- Solution Annealing Parameters
- Loesungsgluehbedingungen
- Parametres De Recuit En Solution Solide
- 辐射损伤
- Austempering
- Calcination
- Electron Beam Annealing
- Electron Beam Applications
- Electron Beam Deposition
- Graphitising
- Graphitizing
- Austenitising
- Homogenising
- Sensitisation (Metallurgy)
- Treatment, Heat
- Laser Beam Annealing
- Laser Annealing
- Magnetic Annealing
- Annealing, Magnetic
- Normalising
- Normalizing
- Radiation Effects
- Damage, Radiation
- Irradiation Effects
- Particle Scattering
- Radiation Damage
- Thermal Spikes
- Spheroidizing
- Thermomagnetic Treatment
- Ultraviolet Radiation Effects
- Uv Radiation Effects
- Annealing Mechanisms
- Gluehvorgang
- Heat Treatment Mechanisms
- Mecanismes De Recuit
- Annealing Parameters
- Gluehbedingungen
- Heat Treatment Parameters
- Parametres De Recuit
- Annealing Processes
- Gluehen
- Heat Treatment Processes
- Procede De Recuit
- Calcination (Francais)
- Kalzinierung
- Heat Treating
- Magnetische Gluehung
- Recuit Magnetique
- Normalizing Mechanisms
- Mecanismes De Normalisation
- Mecanismes De Recuits De Normalisation
- Normalisierung
- Normalizing Parameters
- Normalisierungsbedingungen
- Parametres De Normalisation
- Defauts D Irradiation
- Strahlungs Schaeden
- Irradiation
- Heating
- Heating Methods
- Thermal Treatment
- Alpha Annealing
- Alphatizing
- Galvannealing
- Soft Annealing
- Irradiation Damage
- X射线衍射
- X Ray Diffraction
- X-Ray Diffraction
- Borrmann Effect
- Debye-Scherrer Cameras
- Laue Effect
- Patterson Diagrams
- Pendellosung Fringes
- Radiocrystallography
- Weissenberg Cameras
- Xrd
- Diffraction Des Rayons X
- Roentenbeugung
- Roentgenbeugung
- X Ray Crystallography
- Xray Diffraction
- x射线晶体学
- X Ray Diffractometers
- 光致发光
- 锌白
- Chinese White
- Zinc White
- Oxyde De Zinc
- Zinkoxid
- License
- Unknown
- External links
Abstract
ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 degrees C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19 degrees with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 degrees C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed. (c) 2006 Elsevier B.V. All rights reserved.