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XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.

Authors
  • Tanaka, S
  • Fujii, H
  • Hibino, M
Type
Published Article
Journal
Microscopy research and technique
Publication Date
Nov 01, 1996
Volume
35
Issue
4
Pages
363–364
Identifiers
PMID: 8987033
Source
Medline
License
Unknown

Abstract

A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsP/InP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.

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