X-ray diffractometric characterization of germanium nanocrystlalites on and in silicon carbide / Roentgendiffraktometrische Charakterisierung von Germanium-Nanokristalliten auf und in Siliziumkarbid
- Authors
- Publication Date
- Jan 01, 2004
- Source
- OpenGrey Repository
- Keywords
- Language
- German
- License
- Unknown
Abstract
the aim of this thesis was the comprehensive X-ray characterization of germanium nanocrystallites on and in silicon carbide substrates. on a 6H-SiC wafer by means of MBE technique Ge nanoparticles were grown. In the studied sample crystallites were detected in two orientations, which were relatively to c-axis of the 6H-SiC substrate left angle 111 right angle and left angle 110 right angle oriented. Both Ge nanocrystallite types show laterally a 6-fold symmetry corresponding to the symmetry of the matrix. From the integral widths of the reflexion curves the mean values of the particle dimensions result. They amount in the height to 30 nm and in the width to 68 nm. By means of the anomalous dispersion a Ge content in the Ge nanocrystallites of 89.0% was determined with an error range of 80.0%-100%. Buried Ge nanocrystallites have been formed after the implantation of Ge"+ ions with 250 keV in a 4H-SiC wafer at 700 C and subsequent temperature treatment at 1600 C. Ge nanocrystallites with two different orientations relatively to the 4H-SiC matrix (left angle 111 right angle and left angle 110 right angle oriented to teh c-axis of 4H-SiC) were detected. The Ge nanocrystallites possess a lateral rotational symmetry and have been formed in a depth of about 100 nm. The mean size in lateral and normal direction is dependent on the durance of the temperature treatment at 1600 C and lies between 5 nm and 10 nm. The stoichiometric composition of the Ge nanocrystallite was determined by means of the anomalous dispersion. A Ge content of 94.6% with an error range of 68%-100% results. Additionally the damage of the matrix caused by the implantation was studied. In agreement with the TEM results stacking faults within the 4H-SiC matrix were detected in the region of the naocrystallites. / SIGLE / Available from: <a href=http://deposit.ddb.de/cgi-bin/dokserv?idn=972873198 target=NewWindow>http://deposit.ddb.de/cgi-bin/dokserv?idn=972873198</a> / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Informationsbibliothek / DE / Germany
