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Wafer-level hysteresis-free resonant carbon nanotube transistors.

Authors
Type
Published Article
Journal
ACS Nano
1936-086X
Publisher
American Chemical Society
Publication Date
Volume
9
Issue
3
Pages
2836–2842
Identifiers
DOI: 10.1021/nn506817y
PMID: 25752991
Source
Medline
Keywords
  • Carbon Nanotube
  • Field-Effect Transistors
  • Hysteresis-Free
  • In Situ Tuning
  • Nanoprecision
  • Resonators
  • Wafer-Scale Fabrication

Abstract

We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.

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