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Wafer-level hysteresis-free resonant carbon nanotube transistors.

Authors
Type
Published Article
Journal
ACS Nano
1936-086X
Publisher
American Chemical Society
Publication Date
Volume
9
Issue
3
Pages
2836–2842
Identifiers
DOI: 10.1021/nn506817y
PMID: 25752991
Source
Medline
Keywords
  • Carbon Nanotube
  • Field-Effect Transistors
  • Hysteresis-Free
  • In Situ Tuning
  • Nanoprecision
  • Resonators
  • Wafer-Scale Fabrication

Abstract

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