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Vertical Schottky diode on (113) oriented homoepitaxial diamond

Authors
  • hazdra, p.
  • laposa, a.
  • šobáň, z.
  • alam, m.
  • povolný, v.
  • mortet, v.
Publication Date
May 13, 2024
Source
Digital Library of the Czech Technical University in Prague
Keywords
Language
English
License
Unknown

Abstract

The article presents for the first time vertical Schottky diodes which were fabricated on (113) oriented diamond substrates produced from thick heavily boron-doped diamond layers grown on high-pressure high-temperature grown synthetic Ib diamond crystals. Characteristics of realized diodes, which are fully comparable to those of Schottky-pn diodes prepared on (111) oriented boron-doped diamond, confirm the suitability of (113) orientation for realization of vertical diamond power devices.

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