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Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Authors
  • Shimizu, Tomohiro
  • Zhang, Zhang
  • Shingubara, Shoso
  • Senz, Stephan
  • Gösele, Ulrich
Type
Published Article
Journal
Nano Letters
Publisher
American Chemical Society
Publication Date
Apr 01, 2009
Volume
9
Issue
4
Pages
1523–1526
Identifiers
DOI: 10.1021/nl8035756
PMID: 19296610
Source
Medline
License
Unknown

Abstract

Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

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