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Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications.

  • Zhao, Liyun
  • Gao, Yan1
  • Su, Man
  • Shang, Qiuyu
  • Liu, Zhen
  • Li, Qi1
  • Wei, Qi2
  • Li, Meili
  • Fu, Lei
  • Zhong, Yangguang3
  • Shi, Jia3
  • Chen, Jie3
  • Zhao, Yue4
  • Qiu, Xiaohui3
  • Liu, Xinfeng3
  • Tang, Ning
  • Xing, Guichuan2
  • Wang, Xina1
  • Shen, Bo
  • Zhang, Qing
  • 1 Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science , Hubei University , Wuhan 430062 , P. R. China. , (China)
  • 2 Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering , University of Macau , Macao SAR 999078 , P. R. China. , (China)
  • 3 CAS Key Laboratory of Standardization and Measurement for Nanotechnology , CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology , Beijing 100190 , P. R. China. , (China)
  • 4 Institute for Quantum Science and Engineering and Department of Physics , Southern University of Science and Technology , Shenzhen 518055 , P. R. China. , (China)
Published Article
ACS Nano
American Chemical Society
Publication Date
Aug 28, 2019
DOI: 10.1021/acsnano.9b02885
PMID: 31436948


Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr3) on c-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr3 microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr3-GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr3. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr3 perovskites.

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