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van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene.

Authors
  • Hong, Young Joon1
  • Lee, Wi Hyoung
  • Wu, Yaping
  • Ruoff, Rodney S
  • Fukui, Takashi
  • 1 Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan. [email protected] , (Japan)
Type
Published Article
Journal
Nano Letters
Publisher
American Chemical Society
Publication Date
Mar 14, 2012
Volume
12
Issue
3
Pages
1431–1436
Identifiers
DOI: 10.1021/nl204109t
PMID: 22324301
Source
Medline
License
Unknown

Abstract

Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van der Waals (VDW) epitaxy of InAs nanowires vertically aligned on graphene substrates using metal-organic chemical vapor deposition. The strong correlation between the growth direction of InAs nanowires and surface roughness of graphene substrates was investigated using various graphene films with different numbers of stacked layers. Notably, vertically well-aligned InAs nanowire arrays were obtained easily on single-layer graphene substrates with sufficiently strong VDW attraction. This study presents a considerable advance toward the VDW heteroepitaxy of inorganic nanostructures on chemical vapor-deposited large-area graphenes. More importantly, this work demonstrates the thinnest epitaxial substrate material that yields vertical nanowire arrays by the VDW epitaxy method.

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