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Ultrathin Piezotronic Transistors with 2 nm Channel Lengths.

Authors
  • Wang, Longfei1, 2
  • Liu, Shuhai3
  • Gao, Guoyun1, 2
  • Pang, Yaokun1, 2
  • Yin, Xin4
  • Feng, Xiaolong5
  • Zhu, Laipan1, 2
  • Bai, Yu1, 2
  • Chen, Libo1, 2
  • Xiao, Tianxiao1, 2
  • Wang, Xudong4
  • Qin, Yong3, 6
  • Wang, Zhong Lin1, 2, 7
  • 1 CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China. , (China)
  • 2 College of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China. , (China)
  • 3 School of Advanced Materials and Nanotechnology , Xidian University , Xi'an , 710071 , China. , (China)
  • 4 Department of Materials Science and Engineering , University of Wisconsin-Madison Madison , Wisconsin 53706 , United States. , (United States)
  • 5 Microsystems and Terahertz Research Center , China Academy of Engineering Physics , Chengdu , Sichuan 610200 , China. , (China)
  • 6 Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology , Lanzhou University , Lanzhou 730000 , China. , (China)
  • 7 School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States. , (Georgia)
Type
Published Article
Journal
ACS Nano
Publisher
American Chemical Society
Publication Date
May 22, 2018
Volume
12
Issue
5
Pages
4903–4908
Identifiers
DOI: 10.1021/acsnano.8b01957
PMID: 29701956
Source
Medline
Keywords
Language
English
License
Unknown

Abstract

Because silicon transistors are rapidly approaching their scaling limit due to short-channel effects, alternative technologies are urgently needed for next-generation electronics. Here, we demonstrate ultrathin ZnO piezotronic transistors with a ∼2 nm channel length using inner-crystal self-generated out-of-plane piezopotential as the gate voltage to control the carrier transport. This design removes the need for external gate electrodes that are challenging at nanometer scale. These ultrathin devices exhibit a strong piezotronic effect and excellent pressure-switching characteristics. By directly converting mechanical drives into electrical control signals, ultrathin piezotronic devices could be used as active nanodevices to construct the next generation of electromechanical devices for human-machine interfacing, energy harvesting, and self-powered nanosystems.

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