Affordable Access

deepdyve-link
Publisher Website

Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact.

Authors
  • Kim, Seung-Hwan
  • Han, Kyu Hyun
  • Park, Euyjin
  • Kim, Seung-Geun
  • Yu, Hyun-Yong
Type
Published Article
Journal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society
Publication Date
Sep 18, 2019
Volume
11
Issue
37
Pages
34084–34090
Identifiers
DOI: 10.1021/acsami.9b10746
PMID: 31429263
Source
Medline
Keywords
Language
English
License
Unknown

Abstract

Energy barrier formed at a metal/semiconductor interface is a critical factor determining the performance of nanoelectronic devices. Although diverse methods for reducing the Schottky barrier height (SBH) via interface engineering have been developed, it is still difficult to achieve both an ultralow SBH and a low dependence on the contact metals. In this study, a novel structure, namely, a metal/transition-metal dichalcogenide (TMD) interlayer (IL)/dielectric IL/semiconductor (MTDS) structure, was developed to overcome these issues. Molybdenum disulfide (MoS2) is a promising TMD IL material owing to its interface characteristics, which yields a low SBH and reduces the reliance on contact metals. Moreover, an ultralow SBH is achieved via the insertion of an ultrathin ZnO layer between MoS2 and a semiconductor, thereby inducing an n-type doping effect on the MoS2 IL and forming an interface dipole in the favorable direction at the ZnO IL/semiconductor interfaces. Consequently, the lowest SBH (0.07 eV) and a remarkable improvement in the reverse current density (by a factor of approximately 5400) are achieved, with a wide room for contact-metal dependence. This study experimentally and theoretically validates the effect of the proposed MTDS structure, which can be a key technique for next-generation nanoelectronics.

Report this publication

Statistics

Seen <100 times