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Ultra-energy-efficient CMOS/magnetic non-volatile flip-flop based on spin-orbit torque device

Authors
Type
Published Article
Journal
Electronics Letters
Publisher
Institution of Electrical Engineers
Publication Date
Apr 07, 2014
Volume
50
Issue
8
Pages
585–587
Identifiers
DOI: 10.1049/el.2014.0372
Source
Spintec
Keywords
License
White

Abstract

The spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is a promising device for data storage. Most of the issues encountered with scalable spin transfer-torque (STT) devices are visibly moved. Thanks to a three-terminal architecture, the reliability is increased by separating the read and the write paths. Furthermore, SOT-induced magnetisation switching can be very fast, thanks to a low-resistive writing path. The writing operation is symmetrical. Thus, it requires the same current density to switch between the parallel and antiparallel states. All these advantages make the SOT-MTJ device an ultimate candidate for introducing non-volatility in ultra-fast and power-efficient integrated circuits. A mixed CMOS/magnetic non-volatile flip-flop (NVFF) is described. The proposed architecture offers the possibility to use the usual CMOS flip-flop functionality with possible magnetic data store and restore operations while keeping non-volatility when the circuit is powered off. With a 135 nm dimension, the SOT-MTJ-based NVFF demonstrated a very high switching with a 5× decrease in terms of writing energy/bit when compared with an STT device.

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