UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
- Authors
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
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- Unknown
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Abstract
Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition(UHVCVD) technique. The quantum-confined Stark effect(QCSE) is clearly observed in our MQWs structure.?2011 IEEE.
