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UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation

Authors
  • Zhao, Hongwei
  • Hu, Weixuan
  • Xue, Chunlai
  • Cheng, Buwen
  • Wang, Qiming
  • Zhao, H.([email protected])
Publication Date
Jan 01, 2011
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition(UHVCVD) technique. The quantum-confined Stark effect(QCSE) is clearly observed in our MQWs structure.?2011 IEEE.

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