Tunable photoluminescence of MoS2 quantum dots passivated by different functional groups.
Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Synergetic Innovation Center of Quantum Information Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Synergetic Innovation Center of Quantum Information Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China; Photonic Technology R&D Center, Quanzhou Normal University, No 398, Donghai Main Street, Quanzhou, Fujian 362000, China. Electronic address: [email protected]
- Published Article
Journal of Colloid and Interface Science
- Publication Date
Feb 01, 2018
Recently, transitional metal dichalcogenides quantum dots have attracted much interest as a potential candidate for the application of fluorescent materials. However, little work has been done on tuning their band gap by varying functional groups. Here, we report a band-gap tunability of 1eV in the MoS2 quantum dots (QDs) modified by different functional groups. In our results, it has also been confirmed that a tunable band gap in the MoS2 QDs can be achieved by monotonically varying the concentration of a functional group. A mechanism has also been proposed to explain the enhanced photoluminescence behaviors in the functionalized MoS2 QDs. Our work provides a general guideline to develop other semiconducting QDs to be future impressive fluorescent materials.
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This record was last updated on 06/09/2018 and may not reflect the most current and accurate biomedical/scientific data available from NLM.
The corresponding record at NLM can be accessed at https://www.ncbi.nlm.nih.gov/pubmed/29024861