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Transport properties of topologically non-trivial bismuth tellurobromides Bi nTeBr

Authors
  • Pabst, Falk1, 2
  • Hobbis, Dean2
  • Alzahrani, Noha2
  • Wang, Hsin3
  • Rusinov, I. P.4, 5, 6
  • Chulkov, E. V.5, 6, 7
  • Martin, Joshua8
  • Ruck, Michael1, 9
  • Nolas, George S.2
  • 1 Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany
  • 2 Department of Physics, University of South Florida, Tampa, Florida 33620, USA
  • 3 Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA
  • 4 Tomsk State University, 634050 Tomsk, Russia
  • 5 Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
  • 6 Saint Petersburg State University, 198504 Saint Petersburg, Russia
  • 7 Departamento de Física de Materiales, UPV/EHU, 20080 Donostia-San Sebastián, Basque Country, Spain
  • 8 Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 9 Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany
Type
Published Article
Journal
Journal of Applied Physics
Publisher
American Institute of Physics
Publication Date
Jan 01, 2019
Volume
126
Issue
10
Identifiers
DOI: 10.1063/1.5116369
PMID: 32189721
PMCID: PMC7079704
Source
PubMed Central
Disciplines
  • Article
License
Unknown

Abstract

Temperature-dependent transport properties of the recently discovered layered bismuth-rich tellurobromides BinTeBr (n = 2, 3) are investigated for the first time. Dense homogeneous polycrystalline specimens prepared for different electrical and thermal measurements were synthesized by a ball milling-based process. While the calculated electronic structure classifies Bi2TeBr as a semimetal with a small electron pocket, its transport properties demonstrate a semiconductorlike behavior. Additional bismuth bilayers in the Bi3TeBr crystal structure strengthens the interlayer chemical bonding thus leading to metallic conduction. The thermal conductivity of the semiconducting compositions is low, and the electrical properties are sensitive to doping with a factor of four reduction in resistivity observed at room temperature for only 3% Pb doping. Investigation of the thermoelectric properties suggests that optimization for thermoelectrics may depend on particular elemental substitution. The results presented are intended to expand on the research into tellurohalides in order to further advance the fundamental investigation of these materials, as well as investigate their potential for thermoelectric applications.

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