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Transparent silicon carbide/tunnel SiO<sub>2</sub> passivation for c-Si solar cell front side: Enabling J<sub>sc</sub> > 42 mA/cm<sup>2</sup> and iV<sub>oc</sub> of 742 mV

Authors
  • Pomaska, Manuel (author)
  • Köhler, Malte (author)
  • Procel Moya, P.A. (author)
  • Zamchiy, Alexandr (author)
  • Singh, Aryak (author)
  • Kim, Do Yun (author)
  • Isabella, O. (author)
  • Zeman, M. (author)
  • Li, Shenghao (author)
Publication Date
Jan 01, 2020
Source
TU Delft Repository
Keywords
Language
English
License
Unknown
External links

Abstract

<p>N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc-SiC:H(n) for c-Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc-SiC:H(n) on tunnel oxide (SiO<sub>2</sub>)–passivated c-Si with an implied open-circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm<sup>2</sup>. This excellent passivation quality is achieved directly after the HWCVD deposition of μc-SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF<sub>2</sub>)/silicon nitride (SiN<sub>x</sub>:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm<sup>2</sup> with MgF<sub>2</sub>/SiN<sub>x</sub>:H/μc-SiC:H(n) and 0.62 mA/cm<sup>2</sup> with MgF<sub>2</sub>/μc-SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF<sub>2</sub>/μc-SiC:H(n)/SiO<sub>2</sub>/c-Si as front side layer stack in an IBC solar cell reveal a short-circuit current density of 42.2 mA/cm<sup>2</sup>, an open-circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%.</p> / Photovoltaic Materials and Devices / Electrical Sustainable Energy

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