Affordable Access

Transition from n- to p-type conduction concomitant with enhancement of figure-of-merit in Pb doped bismuth telluride: Material to device development

Authors
  • BOHRA, AK
  • BHATT, R
  • SINGH, A
  • BHATTACHARYA, S
  • BASU, R
  • MESHRAM, KN
  • SARKAR, SK
  • BHATT, P
  • PATRO, PK
  • ASWAL, DK
  • MUTHE, KP
  • GADKARI, SC
Publication Date
Dec 03, 2018
Source
DSpace at IIT Bombay
Keywords
License
Unknown
External links

Abstract

The majority of industrial, automobile processes, electrical appliances emit waste heat in the low-temperature range (<573 K), hence efficient thermoelectric materials operating in this range are highly needed. Bismuth telluride (Bi2Te3) based alloys are conventional thermoelectric material for the low-temperature application. The pure Bi2Te3 sample synthesized in this work exhibits n-type conduction. We demonstrate that by small doping of Pb at Bi site a transition in electrical transport form n- to p-type is observed. The figure-of-merit (ZT) of n-type Bi2Te3 is similar to 0.47 and optimized Bi1.95Pb0.05Te3 exhibit p-type conduction with enhanced ZT of similar to 0.63 at 386 K. The conversion efficiency of Bi1.95Pb0.05Te3 based single thermoelement with hot pressed Ni/Ag electrical contacts was found to be similar to 4.9% for a temperature difference (Delta T) of 200 K. The efficiency was further enhanced to similar to 12% (at Delta T similar to 494 K) in the segmented thermoelement consisting of Bi1.95Pb0.05Te3 and (AgSbTe2)(0.15)(GeTe)(0.85) (i.e. TAGS-85). (C) 2018 Elsevier Ltd. All rights reserved.

Report this publication

Statistics

Seen <100 times