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THz/subTHz detection by asymmetrically-shaped bow-tie diodes containing 2DEG Layer

Authors
  • Seliuta, D.
  • Tamosiunas, V.
  • Sirmulis, E.
  • Asmontas, S.
  • Suziedelis, A.
  • Gradauskas, J.
  • Valusis, G.
  • Steenson, P.
  • Chow, W.-H.
  • Harrison, P.
  • Lisauskas, A.
  • Roskos, H.G.
  • Köhler, K.
Publication Date
Jan 01, 2005
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

We present asymmetrically-shaped bow-tie diodes based on a modulation-doped GaAs/AlGaAs structure. One of the bow-tie leaves is metallized in order to concentrate the incident radiation into the apex of the other half which contains the 2DEG layer: Here the electrons are heated non-uniformly by incident radiation inducing a voltage signal over the ends of the device. The diode sensitivity at room temperature within 10 GHz - 0.8 THz is close to 0.3 V/W, while with an increase of frequency up to 2.52 THz it decreases due to weaker coupling. We consider options to improve the operation of the device.

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