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THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions.

Authors
  • Dietz, Roman J B
  • Gerhard, Marina
  • Stanze, Dennis
  • Koch, Martin
  • Sartorius, Bernd
  • Schell, Martin
Type
Published Article
Journal
Optics Express
Publisher
The Optical Society
Publication Date
Dec 19, 2011
Volume
19
Issue
27
Pages
25911–25917
Identifiers
DOI: 10.1364/OE.19.025911
PMID: 22274179
Source
Medline
License
Unknown

Abstract

We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz.

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