Thin tantalum-based diffusion barriers for the copper conducting-stripe technology Thermal stability, failure mechanism, and influence of the microstructure of the metallization material / Duenne tantalbasierte Diffusionsbarrieren fuer die Kupfer-Leitbahntechnologie Thermische Stabilitaet, Ausfallmechanismen und Einfluss auf die Mikrostruktur des Metallisierungsmaterials
- Authors
- Publication Date
- Jan 01, 2004
- Source
- OpenGrey Repository
- Keywords
- Language
- German
- License
- Unknown
Abstract
In this thesis the study of Cu/Ta/SiO_2/Si and Cu/TaN/SiO_2/Si systems is described. The microstructure of these systems was studied by means of XRD and TEM. Thereafter microstructural changes caused by heat treatments were studied. Ta depth profiles are presented. Furthermore the influence of passivation is discussed. (HSI) / SIGLE / Available from: <a href=http://deposit.ddb.de/cgi-bin/dokserv?idn=973243937 target=NewWindow>http://deposit.ddb.de/cgi-bin/dokserv?idn=973243937</a> / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Informationsbibliothek / DE / Germany
