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Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

Authors
  • feng, g
  • zhu, jj
  • shen, xm
  • zhang, bs
  • zhao, dg
  • wang, yt
  • yang, h
  • liang, jw
Publication Date
Jan 01, 2003
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

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