Affordable Access

deepdyve-link
Publisher Website

Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettability

Authors
  • Zhao, Bo
  • Mattelaer, Felix
  • Rampelberg, Geert
  • Dendooven, Jolien
  • Detavernier, Christophe
Publication Date
Jan 01, 2020
Identifiers
DOI: 10.1021/acsami.9b18412
OAI: oai:archive.ugent.be:8641774
Source
Ghent University Institutional Archive
Keywords
Language
English
License
Unknown
External links

Abstract

The atomic layer deposition (ALD) of yttrium oxide (Y2O3) is investigated using the liquid precursor Y(EtCp)2(iPr-amd) as the yttrium source with thermal (H2O) and plasma-enhanced (H2O plasma and O2 plasma) processes, respectively. Saturation is confirmed for the growth of the Y2O3 films with each investigated reactant with a similar ALD window from 150 to 300 °C, albeit with a different growth rate. All of the as-deposited Y2O3 films are pure and smooth and have a polycrystalline cubic structure. The as-deposited Y2O3 films are hydrophobic with water contact angles >90°. The water contact angle gradually increased and the surface free energy gradually decreased as the film thickness increased, reaching a saturated value at a Y2O3 film thickness of ∼20 nm. The hydrophobicity was retained during post-ALD annealed at 500 °C in static air for 2 h. Exposure to polar and nonpolar solvents influences the Y2O3 water contact angle. The reported ALD process for Y2O3 films may find potential applications in the field of hydrophobic coatings.

Report this publication

Statistics

Seen <100 times