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THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

Authors
  • dostov, vl
  • ipatova, ip
  • kulikov, ay
  • ioffe, vl dostov
Publication Date
Jan 01, 1993
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

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